KTD1898 SECOS | Alldatasheet
Document overview
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Technical content
1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 10-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Small Flat Package /circle6 General Purpose Application CLASSIFICATION OF h FE(1) Product-Rank KTD1898-O KTD1898-Y KTD1898-GR Range 70~140 120~240 200~400 Marking ZO ZY ZG
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5 V Collector Current-Continuous I C 1 A Collector Power Dissipation P C 500 mW Maximum Junction to Ambient R θJA 250 ° C / W Junction & Storage Temperature T J, T STG 150, -55~150 ° C
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V (BR)CBO 100 - - V I C =0.1mA, I E=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V I C =1mA, I B=0 Emitter-Base Breakdown Voltage V (BR)EBO 5 - - V I E=0.1mA, I C =0 Collector Cut-Off Current I CBO - - 0.1 µA VCB =80V, I E=0 Emitter Cut-Off Current I EBO - - 0.1 µA VEB =4V, I C =0 DC Current Gain h FE 70 - 400 V CE =3V, I C = 500mA Collector-Emitter Saturation voltage VCE(sat) - - 0.4 V I C =500mA, I B=20mA Transition Frequency f T - 100 - MHz VCE =10V,I C =50mA,f=100MHz Collector Output Capacitance C OB - 20 - pF VCB =10V, I E=0, f=1MHz Package MPQ Leader Size SOT-89 1K 7 inch SOT-89 A E C DB KH F G LJ 1 2 3 B C E REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.4 0 4.6 0 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.50 1.85 L 0.35 0.44 F 0.89 1.20