KTD1898_15 KEC | Alldatasheet
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Technical content
- 7. 3 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1898 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260. MAXIMUM RATING (Ta=25 DIM A B D E G H K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05 SOT-89 C J G D 12 3 2. COLLECTOR (HEAT SINK) A C K J F MILLIMETERS H 1. BASE 3. EMITTER B E FF D +_ ELECTRICAL CHARACTERISTICS (Ta=25 Note : hFE Classification O:70 140, Y:120 240, GR:200 400 * Mounted on ceramic substrate (250mm2 0.8t) Z Type Name h RankFE Lot No. Marking CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 1 A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 80 - - V DC Current Gain hFE(Note) VCE=3V, IC=500mA 70 - 400 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.4 V Transition Frequency fT VCE=10V, IC=50mA, f=100MHz - 100 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1 A Emitter Current IE -1 A Collector Power Dissipation PC 500 mW PC* 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150
- 7. 3 2/3 KTD1898 Revision No : 1 C 0.1 BASE-EMITTER VOLTAGE V (V) I - VC COLLECTOR CURRENT I (mA) 100 1000 BE BE Ta=25 C V =5VCE COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) C CE CECI - V 0.2 0.4 0.6 0.8 1.0 DC CURRENT GAIN h COLLECTOR CURRENT I (mA) C h - I FE 100 300 FE C V =3VCE V =1VCE COLLECTOR SATURATION CE(sat) 0.01 COLLECTOR CURRENT I (mA)C CCE(sat)V - I VOLTAGE V (V) 0.02 0.05 0.1 0.2 0.5 1.0 2.0 I /I =20/1C B I /I =10/1BC Ta=25 C TRANSITION FREQUENCY f (MHz)T EMITTER CURRENT I (mA)C f - ITE 100 200 500 2 5 10 20 50 100 200 500 1K Ta=25 C V =-5VCE COLLECTOR OUTPUT CAPACITANCE C (pF) 0.1 0.2 ob 100 1000 COLLECTOR-BASE VOLTAGE V (V) 100.5 1 5 2 CB 20 50 100 C - Vob CB Ta=25 C f=1MHz I =0AE 1.8 2.0 024681 0 1 2 0 10 100 1K Ta=25 C 6mA 5mA 4mA 3mA 2mA 1mA I =0mAB Ta=25 C 0 10 100 1000 I =0AC
- 7. 3 3/3 KTD1898 Revision No : 1 COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( C) Pc - Ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 MOUNTED ON CERAMIC SUBSTRATE (250mm x0.8t) Ta=25 C (CONTINUOUS) DC OPERATION COLLECTOR-EMITTER VOLTAGE V (V) SAFE OPERATING AREA COLLECTOR CURRENT I (A) 30m 10m 100m 300m C CE 0.1 0.3 1 3 10 30 100 100mS * Pw=10ms *I MAX. I (Pulse) MAX. *C C * SINGLE NONREPETITVE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE PULSE Ta=25 C