KTD1898 BILIN | Alldatasheet
Document overview
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Technical content
E153 www.gmicroelec.com R e v . A 1
FEATURES
z High V CEO,VCEO=80V. z High I C,IC=1A(DC). z Good H FE Linearity. z Low V CE(sat). z Complement the 2SB1260.
APPLICATIONS
z NPN silicon transistor. SOT-89
ORDERING INFORMATION
T y p e N o . M a r k i n g P a c k a g e C o d e KTD1898 DF SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A IC Collector Current -pulse 2 A PC Collector Dissipation 0.5 W W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Note1:Mounted on ceramic substrate(250mm2*0.8t) Pb Lead-free
E153 www.gmicroelec.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO I C=1mA,IB=0 80 V Collector cut-off current ICBO VCB=80V,IE=0 1 μA Emitter cut-off current IEBO VEB=4V,IC=0 1 μA DC current gain hFE VCE=3V,IC=0.5A 70 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 20mA 0.4 V Transition frequency fT VCE=10V, IC= -50mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 20 pF CLASSIFICATION OF h FE(1) Rank O Y R Range 70-140 120-240 200-400 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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E153 www.gmicroelec.com R e v . A 4 PACKAGE OUTLINE Plastic surface mounted package SOT-89 SOLDERING FOOTPRINT Unit:mm
PACKAGE INFORMATION
A 4.30 4.70 B 2.25 2.65 C 1.50 Typical D 0.40 Typical E 1.40 1.60 F 0.48 Typical H 1.60 1.80 J 0.40 Typical L 0.90 1.10 K 3.95 4.35 All Dimensions in mm Device Package Shipping KTD1898 SOT-89 1000/Tape&Reel BK C DE JF A H L 45°45° 1.00 1.50 1.50 0.902.200.90 1.00 1.50