KTD1898_15 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Tran sistors NPN Transistors KTD1898 ■ Features
- Small Flat Package
- General Purpose Application 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 A Collector Power Dissipation PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 100 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 80 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=20mA 0.4 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=20mA 1 DC current gain hFE VCE= 3V, IC= 500mA 70 400 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 10V, IC= 50mA , f=100MHz 100 MHz V V uA ■ Classification of hfe Type KTD1898-O KTD1898-Y KTD1898-G Range 70-140 120-240 200-400 Marking ZO ZY ZG