KTD1882 KEC | Alldatasheet

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Technical content

  1. 12. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KTD1882 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING

FEATURES

ᴌComplementary to KTB1772. MAXIMUM RATING (Ta=25ᴱ) TO-92 DIM MILLIMETERS A B C D F G H J K L

4.70 MAX

4.80 MAX

3.70 MAX

0.45 1.00 1.27 0.85 0.45 14.00 0.50

0.55 MAX

2.30 D 1 2 3 B AJ K G H F F L E C E C M N

0.45 MAXM

1.00N 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 1 ỌA Emitter-Cut-off Current IEBO VEB=3V, IC=0 - - 1 ỌA DC Current Gain * hFE(1) VCE=2V, IC=20mA 30 150 - hFE(2) (Note) VCE=2V, IC=1A 100 160 400 Collector-Emitter Saturation Voltage * VCE(sat) IC=2A, IB=0.2A - 0.3 0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=2V, IB=0.2A - 1.0 2.0 V Current Gain Bandwidth Product fT VCE=5V, IC=0.1A - 90 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 45 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current DC IC 3 A Pulse (Note) ICP 7 Base Current (DC) IB 0.6 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ Note : Pulse Width ⏊10mS, Duty Cycle⏊50%. * Pulse Test : Pulse Widthᴪ350ỌS, Duty Cycleᴪ2% Pulsed Note: hFE(2) Classification O:100ᴕ200 , Y:160ᴕ320 , GR:200ᴕ400

  1. 12. 8 2/2 KTD1882 Revision No : 0 C COLLECTOR CURRENT I (A) CE 161282 04 COLLECTOR-EMITTER VOLTAGE V (V) CEI - VC DC CURRENT GAIN h FE COLLECTOR CURRENT I (mA)C FEh - I C SATURATION VOLTAGE V V (mV)CE(sat), COLLECTOR CURRENT I (mA)C CE(sat)V ,V - I C 0.4 0.8 1.2 1.6 2.0 100 300 0.01 500 103 C 0.30.1 1 COLLECTOR CURRENT I (A) Cf - IT TCURRENT GAIN BANDWIDTH PRODUCT f (MHz) I =1mAB I =2mAB I =3mAB I =4mAB I =5mAB BI =6mA BI =7mA I =8mAB I =9mAB I =10mAB BE(sat) 100 300 500 3 5 10 30 50 100 300 1K 3K V =2VCE 1K1013 100 500 300 10030 300 3K BE(sat) I /I =10C B V (sat)CE V (sat)BE 0.03 V =5VCE obCAPACITANCE C (pF) 100 COLLECTOR-BASE VOLTAGE V (V) 10 30 100 300 I =0 3K1K CB E 300 500 C - Vob CB f=1MHz COLLECTOR POWER DISSIPATION 0 AMBIENT TEMPERATURE Ta ( C) CP - Ta 100 200 300 400 500 600 700 25 50 75 100 125 150 175 P (mW)C