KTD1863_15 KEC | Alldatasheet

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Technical content

  1. 8. 21 1/2 SEMICONDUCTOR TECHNICAL DATA KTD1863 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION.

FEATURES

High Breakdown Voltage and High Current : VCEO=80V, IC=1A. Low VCE(sat) Complementary to KTB1241. MAXIMUM RATING (Ta=25 DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L

7.20 MAX

5.20 MAX

2.50 MAX

0.60 MAX

1.27

1.70 MAX

0.55 MAX

14.00 0.50

0.35 MIN

0.75 0.10 F J M O Q 1.25 Φ1.50

0.10 MAX

DEPTH:0.2 123 B A C Q K FF M M NN O H L J D C N G P HH E D H R S 12.50 0.50R 1.00S

1.15 MAX

ELECTRICAL CHARACTERISTICS (Ta=25 Note : hFE Classification O:70 140, Y:120 240, GR:200 400 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Emitter Current IE -1 A Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 1 A Emitter-Cut-off Current IEBO VEB=4V, IC=0 - - 1 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 80 - - V DC Current Gain hFE (Note) VCE=3V, IC=500mA 70 - 400 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.4 V Transition Frequency fT VCE=10V, IC=50mA, f=100MHz - 100 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF

  1. 8. 21 2/2 KTD1863 Revision No : 1 C 0.1 BASE-EMITTER VOLTAGE V (V) I - VC COLLECTOR CURRENT I (mA) 100 1000 BE BE Ta=25 C V =5VCE COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (A)0 C CE CECI - V 0.2 0.4 0.6 0.8 1.0 DC CURRENT GAIN h COLLECTOR CURRENT I (mA) C h - I FE 100 1000 FE C V =3VCE V =1VCE COLLECTOR SATURATION CE(sat) 0.01 COLLECTOR CURRENT I (mA)C CCE(sat)V - I VOLTAGE V (V)0.02 0.05 0.1 0.2 0.5 1.0 2.0 I /I =20/1C B I /I =10/1BC Ta=25 C TRANSITION FREQUENCY f (MHz)T EMITTER CURRENT I (mA)C f - IT E 100 200 500 1000 2 5 10 20 50 100 200 500 1000 Ta=25 C V =-5VCE COLLECTOR OUTPUT CAPACITANCE C (pF) 0.1 0.2 ob 100 1000 COLLECTOR-BASE VOLTAGE V (V) 100.5 1 5 2 CB 20 50 100 C - Vob CB Ta=25 C f=1MHz I =0AE COLLECTOR CURRENT I (A)C 100.1 COLLECTOR-EMITTER VOLTAGE V (V)CE SAFE OPERATION AREA 0.2 1 2 20 100 10m 20m 50m 100m 200m 500m I Max. (Pulse)C 0.5 5 50 Pw=10ms Pw=100ms Ta=25 C *Single nonrepetitive pulse 1.8 2.0 024681 0 0 10 100 1000 Ta=25 C 6mA 5mA 4mA 3mA 2mA 1mA I =0mAB Ta=25 C 0 10 100 1000 I =0AC DC