KTD1691_15 KEC | Alldatasheet

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  1. 7. 24 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

FEATURES

High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTB1151. MAXIMUM RATING (Ta=25 TO-126 H J MILLIMETERS C E F G D A B DIM A C E F G H J K M O PN L D 1. EMITTER 2. COLLECTOR 3. BASE K L M N O P

8.3 MAX

5.8 0.7 Φ3.2 0.1 3.5 11.0 0.3

2.9 MAX

1.0 MAX

1.9 MAX

0.75 0.15 2.3 0.1 0.65 0.15 1.6

3.4 MAX

B 1 23 15.50 0.5+_ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse * ICP 8 Base Current IB 1 A Collector Power Dissipation Ta=25 PC 1.5 W Tc=25 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A DC Current Gain * hFE 1 VCE=1V, IC=0.1A 60 - - hFE2 (Note) VCE=1V, IC=2A 160 - 400 hFE 3 VCE=2V, IC=5A 50 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=2A, IB=0.2A - 0.1 0.3 V Base-Emitter Saturation Voltage * VBE(sat) IC=2A, IB=0.2A - 0.9 1.2 V Switching Time Turn On Time ton IB1 5ΩB1I CCV =10V IB2 IB2 20µsec I =-I =0.2A B1 B2 OUTPUT DUTY CYCLE INPUT - 0.2 1 SStorage Time tstg - 1.1 2.5 Fall Time tf - 0.2 1 * Pulse test : PW S, Duty Cycle 2% Pulse Note) hFE(2) Classification : O:160 320, Y:200 400. * PW 10ms, Duty Cycle 50%

  1. 7. 24 2/3 KTD1691 Revision No : 3 COLLECTOR CURRENT I (A)C 0.80.40 COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V Pc - Ta AMBIENT TEMPERATURE Ta ( C) POWER DISSIPATION P (W)C 50 100 150 200 CASE TEMPERATURE Tc ( C) I DERATING d (%) 120 160 200100 150 d - TTC TC 40 200 8040 60 100 S/b Limited Dissipation Limited CECOLLECTOR-EMITTER VOLTAGE V (V) CCOLLECTOR CURRENT I (A) SAFE OPERATING AREA 25 75 125 175 100 140 V (SUS)CEO 1.2 1.6 2.0 I =0mAB I =10mAB I =20mAB I =30mAB I =40mAB I =60mAB I =80mABI =100 mA BI =150mAB I =200mAB DC CURRENT GAIN hFE 0.01 COLLECTOR CURRENT I (A)C h - IFE C 0.03 0.1 0.3 1 3 10 100 300 500 V =2VCE V =1VCE Tc=Ta NO HEAT SINK

1 INFINITE HEAT SINK

REVERSE BIASSAFE OPERATING AREA 13 1 0 3 0 0.1 100 0.3 0.5 55 0 2mS* 10mS* 200mSDiss ipation L imited S/b Limited V MAX.CEO I (DC) MAX. I (Pulse) MAX.C COLLECTOR CURRENT I (A)C COLLECTOR-EMITTER VOLTAGE V (V)CE C * SINGLE NONREPETITVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE

  1. 7. 24 3/3 KTD1691 Revision No : 3 V V (V) COLLECTOR CURRENT I (A)C V V - I BE(sat), 0.030.01 0.1 0.3 1 3 10 0.01 0.03 0.05 0.1 0.3 0.5 BE(sat), CE(sat) STATURATION VOLTAGE CE(sat) C I /I =10CB V BE(sat) V CE(sat)