KTD1510_15 KEC | Alldatasheet
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Technical content
- 4. 21 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1510 TRIPLE DIFFUSED NPN TRANSISTOR Revision No : 2 HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR.
FEATURES
hComplementary to KTB2510. hRecommended for 60W Audio Amplifier Output Stage. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=160V, IE=0 - - 100 ǺA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 ǺA Collector-Emitter Breakdown Voltage V(BR)CEO IC=30mA, IB=0 150 - - V DC Current Gain hFE VCE=4V, IC=7A 5000 12000 20000 Collector-Emitter Saturation Voltage VCE(sat) IC=7A, IB=7mA - - 2.5 V Base-Emitter Saturation Voltage VBE(sat) IC=7A, IB=7mA - - 3.0 V Transition Frequency fT VCE=12V, IC=2A - 50 - MHz Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 230 - pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 10 A Base Current IB 1 A Collector PowerDissipation (Tc=25) PC 100 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150
- 4. 21 2/3 KTD1510 Revision No : 2
- 4. 21 3/3 KTD1510 Revision No : 2