KTD1510 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor KTD1510
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=150V(Min)
- Collector-EmitterSaturationVoltage- :VCE(sat)=2.5V(Max) @IC=7A
- High DCCurrentGain :hFE=5000(Min)@IC=7A,VCE=4V
- ComplementtoType KTB2510
APPLICATIONS
- High poweramplifierapplications
- Recommendedfor60W audioamplifieroutput stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 160 V VCEO Collector-EmitterVoltage 150 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 10 A IB BaseCurrent-Continuous 1 A PC CollectorPowerDissipation @TC=25℃ 100 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor KTD1510 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=30mA;IB=0 150 V VCE(sat) Collector-EmitterSaturationVoltage IC=7A;IB=7mA 2.5 V VBE(sat) Base-EmitterSaturationVoltage IC=7A;IB=7mA 3 V ICBO CollectorCutoffCurrent VCB=160V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 100 μA hFE DCCurrentGain IC=7A;VCE=4V 5000 fT Current-Gain—BandwidthProduct IC=2A;VCE=12V 50 MHz COB OutputCapacitance IE=0;VCB=10V;ftest=1MHz 230 pF