KTD1415_07 KEC | Alldatasheet

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  1. 5. 22 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1415 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.

FEATURES

High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 2.70 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ Φ3.2 0.2+_ 10.0 0.3+_ 15.0 0.3+_ 3.0 0.3+_ 4.5 0.2+_ 2.54 0.1+_ +2.6 0.2_ 6.8 0.1+_ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 100 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 3.0 mA Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V DC Current Gain hFE(1) VCE=3V, IC=3A 2000 - 15000 hFE(2) VCE=3V, IC=7A 1000 - - Collector-Emitter Saturation Voltage VCE(sat)(1) IC=3A, IB=6mA - 0.9 1.5 V VCE(sat)(2) IC=7A, IB=14mA - 1.2 2.0 Base-Emitter Saturation Voltage VBE(sat) IC=3A, IB=6mA - 1.5 2.5 V Switching Time Turn-on Time ton 15Ω CCV =45VDUTY CYCLE 1% IB2 B2I =-I =6mAB1 B2I I B120µS B1I INPUT OUTPUT - 0.8 - SStorage Time tstg - 3.0 - Fall Time tf - 2.5 - CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 7 A Base Current IB 0.2 A Collector Power Dissipation (Tc=25 ) PC 30 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 5KΩ BASE COLLECTOR EMITTER 150Ω~=~= EQUIVALENT CIRCUIT

  1. 5. 22 2/3 KTD1415 Revision No : 1 CE(sat) COLLECTOR-EMITTER SATURATION0.3 VOLTAGE V (V) C COLLECTOR CURRENT I (A) CE 8641 02 COLLECTOR-EMITTER VOLTAGE V (V) CE(sat)V - I C 10312 00.4 CEI - VC 0.3 DC CURRENT GAIN h FE 300 COLLECTOR CURRENT I (A) 13 1 0 3 0 C FEh - I C COMMON EMITTER Tc=25 C 1.4 1.2 1.0 0.8 0.6 0.4 I =0.2mAB 120 COLLECTOR-EMITTER VOLTAGE V (V) 21 0 468 CE COLLECTOR CURRENT I (A) C CI - VCE Tc=100 C COMMON EMITTER 1.0 0.8 0.6 0.4 BI =0.2mA 120 COLLECTOR-EMITTER VOLTAGE V (V) 21 0 468 CE COLLECTOR CURRENT I (A) C CI - VCE COMMON EMITTER Tc=-50 C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 BI =0.5mA 500 1000 3000 5000 10000

20000 COMMON EMITTER

V =3VCE Tc=100 C -50 CCOLLECTOR CURRENT I (A) 0.5 CI /I =500 COMMON EMITTER B 0.5 VOLTAGE V (V)1 BASE-EMITTER SATURATION BE(sat) 0.4 20 13 1 0 CV - IBE(sat) B COMMON EMITTER I /I =500C COLLECTOR CURRENT I (A)C Tc=100 C -50 -50 Tc=100 C 5 5

  1. 5. 22 3/3 KTD1415 Revision No : 1 th 10 TRANSIENT THERMAL RESISTANCE 100 r ( C/W) C COLLECTOR CURRENT I (A) BE 1.61.202 . 0 0.8 BASE-EMITTER VOLTAGE V (V) 0.4 thr - t w 10.10.01 100.001 PULSE WIDTH t (sec) BEI - VC 2.4 2.8 3.2 COMMON EMITTER V =3VCE Tc=100 C -50 w 0.1 100 1000 CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE)

1 INFINITE HEAT SINK

2 NO HEAT SINK

0.5 0.3 0.1 0.05 COLLECTOR CURRENT I (A) 0.03 C COLLECTOR-EMITTER VOLTAGE V (V) 101 30 100 CE I MAX.(PULSED)C CI MAX. (CONTINUOUS) DC OPERATI ON Tc=25 C 100 µS 1mS10mS100 mS V MAX.CEO SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE