KTD1413_07 KEC | Alldatasheet

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  1. 5. 22 1/2 SEMICONDUCTOR TECHNICAL DATA KTD1413 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.

FEATURES

High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. MAXIMUM RATING (Ta=25 DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 2.70 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ Φ3.2 0.2+_ 10.0 0.3+_ 15.0 0.3+_ 3.0 0.3+_ 4.5 0.2+_ 2.54 0.1+_ +2.6 0.2_ 6.8 0.1+_ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEB0 7 V Collector Current IC 5 A Base Current IB 0.5 A Collector Power Dissipation (Tc=25 ) PC 25 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 1 mA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 100 - - V DC Current Gain hFE(1) VCE=2V, IC=3A 2000 6000 15000 hFE(2) VCE=2V, IC=5A 500 - - Saturation Voltage Collector-Emitter VCE(sat) IC=3A, IB=3mA - 0.9 1.5 V Base-Emitter VBE(sat) IC=3A, IB=3mA - 1.6 2.0 Switching Time Turn-on Time ton 16.7Ω CCV =50VDUTY CYCLE 1% IB2 B2I =-I =3mAB1 B2I I B120µS B1I INPUT OUTPUT - 1.0 - SStorage Time tstg - 3.5 - Fall Time tf - 1.2 - 3KΩ BASE COLLECTOR EMITTER 300Ω~=~= EQUIVALENT CIRCUIT

  1. 5. 22 2/2 KTD1413 Revision No : 1 C COLLECTOR CURRENT I (A) CE 43251 COLLECTOR-EMITTER VOLTAGE V (V) CEI - VC DC CURRENT GAIN h FE 100 0.01 COLLECTOR CURRENT I (A) 0.03 1 0.1 0.3 C FEh - I C 0.3 SATURATION VOLTAGE V (V)CE(sat) 100 0.01 COLLECTOR CURRENT I (A) 0.03 1 0.1 0.3 0.5 C CE(sat)V - I C COLLECTOR CURRENT I (A)C 3.0 5.0 COLLECTOR-EMITTER VOLTAGE V (V) 35 051 0 3 0 CE SAFE OPERATING AREA Tc=25 C COMMON EMITTER 1.0mA 0.7mA 0.5mA 0.4mA 0.35mA BI =0.3mA 30 300 500 1000 3000 5000 10000 35 1 0 COMMON EMITTER V =2VCE 20015010050 AMBIENT TEMPERATURE Ta ( C) CCOLLECTOR POWER DISSIPATION P (W) 0.5 0.1 35 1 0 0.1 0.5 0.01 100 0.3 1053 C 0.50.30.1 10.03 COLLECTOR CURRENT I (A) CI /I =1000 COMMON EMITTER B B COMMON EMITTER I /I =1000C 1.0 0.5 0.3 0.1 0.05 0.03 0.01 100 300 1000 *PW=100 µS *300µS*1mS *3mS *100mS *10mS V MAX.CEO I MAX.C (PULSED) * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE P - TaC

40 Tc=Ta

CV - IBE(sat) COLLECTOR-EMITTER BASE-EMITTER BE(sat)SATURATION VOLTAGE V (V)