KTD1411 KEC | Alldatasheet
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Technical content
- 7. 24 1/2 SEMICONDUCTOR TECHNICAL DATA KTD1411 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) MAXIMUM RATING (Ta=25 TO-126 H J MILLIMETERS C E F G D A B DIM A C E F G H J K M O PN L D 1. EMITTER 2. COLLECTOR 3. BASE K L M N O P
8.3 MAX
5.8 0.7 Φ3.2 0.1 3.5 11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15 2.3 0.1 0.65 0.15 1.6
3.4 MAX
B 1 23 15.50 0.5+_ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Collector Current IC 4 A Base Current IB 0.5 A Collector Power Dissipation (Tc=25 ) PC 15 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 20 A Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 100 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 60 - - V DC Current Gain hFE(1) VCE=2V, IC=1A 3000 - - hFE(2) VCE=2V, IC=3A 1000 - - Saturation Voltage Collector-Emitter VCE(sat) IC=3A, IB=30mA - - 1.5 V Base-Emitter VBE(sat) IC=3A, IB=30mA - - 2.0
Revision No : 2 CCOLLECTOR POWER DISSIPATION P (W) SATURATION VOLTAGE V (V) CE(sat) COLLECTOR CURRENT I (A)C AMBIENT TEMPERATURE Ta ( C) CP - Ta V - Ih - I CCOLLECTOR CURRENT I (A) 0.1 0.3 0.5 1 FEDC CURRENT GAIN h FE C 35 1 0 V =2VCE CE(sat) C 500 10k 30k COMMON EMITTER 0.1 C 0.3 0.5 1 35 1 0 0.4 0.8 1.2 1.6 2.0 1.8 1.4 1.0 0.6 0.2 I - V BEBASE EMITTER VOLTAGE V (V) BEC V =3V COLLECTOR CURRENT I (A)C CE 0.5 1 1.5 2 SAFE OPERATING AREA CECOLLECTOR-EMITTER VOLTAGE V (V) 1 3 10 100 0.1 CCOLLECTOR CURRENT I (A) 3055 0 0.3 0.5 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN SINGLE NONREPETITIVE PULSE Tc=25 C* I MAX.(PULSED)*C CI MAX.(CONTINUOUS) 100 µS* 1mS*10mS* DC OPERATION Tc=25 C V MAX.CEO 100 150 20025 75 125 175 I /I =100B Tc=Ta INFINITE HEAT SINK TEMPERATURE 2003. 7. 24