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WEJ ELECTRONIC CO.,LTD KTD1351 TRANSISTOR (NPN)
FEATURES
P CM: 2 W ( T a m b = 2 5 ℃ ) Collector current I CM: 3 A Collector-base voltage V (BR)CBO: 6 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100 µA,I E=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 50mA, I B=0 60 V Emitter-base breakdown voltage V(BR)EBO I E= 100 µA , IC=0 7 V Collector cut-off current ICBO V CB= 60V, IE=0 100 µA Emitter cut-off current IEBO V EB= 7V, IC=0 100 µA DC current gain hFE V CE= 5V, IC= 0.5 A 60 300 Collector-emitter saturation voltage VCE(sat) V CE=2A, IB=0.2A 1 V Base-emitter voltage VBE V CE= 5V, IC=0.5A 1 V Transition frequency fT V CE=5V, IC=0.5A 2 MH Z CLASSIFICATION OF h FE (1) Rank O Y GR R a n g e 60-120 100-200 150-300 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER KTD1351 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. R o HS