KTD1347 KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- 11. 30 1/3 SEMICONDUCTOR TECHNICAL DATA KTD1347 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes. ᴌLow collector-to-emitter saturation voltage. ᴌFast switching speed. ᴌLarge current capacity and wide ASO. ᴌComplementary to KTB985. MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10 F J M O Q 1.25 Φ1.50
0.10 MAX
DEPTH:0.2 123 B A C Q K FF M M NN O H L J D C N G P HH E D H R S 12.50 0.50R 1.00S
1.15 MAX
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) Note : hFE (1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Vollector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Collector Current (Pulse) ICP 6 A Collector Power Dissipation PC 1 W Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1 ὧ Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 ὧ DC Current Gain hFE (1) (Note) VCE=2V, IC=100Ὠ 100 - 400 hFE (2) VCE=2V, IC=3A 35 - - Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=100Ὠ - 0.19 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100Ὠ - 0.94 1.2 V Transition Frequency fT VCE=10V, IC=50Ὠ - 150 - ὲ Collector Output Capacitance Cob VCB=10V, IE=0, f=1ὲ - 25 - ὸ Switching Time Turn-on Time ton IB2 470µ -5V 25V 10I 1=-10I =I =1AB B2 C 100µ VR IB1PW=20µs DC 1% R8 INPUT <= - 70 - nSStorage Time tstg - 650 - Fall Time tf - 35 -
- 11. 30 2/3 KTD1347 Revision No : 1 COLLECOTR CURRENT I (A) C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V DC CURRENT GAIN h FE 0.30.10.030.01 COLLECTOR CURRENT I (A)C h - I CECOLLECTOR EMITTER VOLTAGE V (V) 02 4 6 COLLECTOR CURRENT I (A) 1.0 2.0 3.0 4.0 5.0 I =0B FE C 13 1 0 100 300 500 V =2VCE 81 01 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 5mA 10mA 20mA 40mA 60mA 100mA COLLECTOR CURRENT I (A) 0.8 1.6 C 2.4 3.2 BASE EMITTER VOLTAGE V (V) 0.4 I - VC BE BE 0.4 1.2 2.0 2.8 V =2VCE Ta=75 C C -25 C C CEI - VC 14 16 18 20 2.0 0.01 VOLTAGE V (mV) 100 500 300 CE(sat) COLLECTOR CURRENT I (A) 0.10.03 0.3 1 C 31 0 V - ICE(sat) C I /I =20C B COLLECTOR EMITTER SATURATION 80mA I =0B 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA Ta=75 C Ta=-25 C Ta=25 C I /I =20 BASE-EMITTER SATURATION Ta=25 C COLLECTOR CURRENT I (A) 0.01 0.03 VOLTAGE V (V) 0.1 0.3 0.5 BE(sat)1 31 010.30.1 C Ta=75 C Ta=-25 C C B V - IBE(sat) C
- 11. 30 3/3 KTD1347 Revision No : 1 GAIN-BANDWIDTH PRODUCT f (MHz) COLLECTOR CURRENT I (A) 0.030.01 0.1 0.3 1 10 3 C T 300 100 500 Tf - I C CEV =10V OUTPUW CAPACITANCE C (pF) COLLECTOR BASE VOLTAGE V (V) 10 30 100 CB ob 100 obC - VCB f=1MHz 5 50 200 1.2 COLLECTOR DISSIPATION P (W) AMBIENT TEMPERATURE Ta ( C) 0.8 1.0 0.4 0.2 0.6 02 0 12040 60 100 80 160 140 1.8 1.6 1.4 C Pc - Ta COLLECTOR CURRENT I (A) COLLECTOR EMITTER VOLTAGE V (V) Ta=25 C ONE PULSE 0.3 0.05 0.5 0.3 0.1 0.03 0.02 0.1 DC Operation 13 1 0 CE 10030 SAFE OPERATING AREA I MAX. CP C I C 100ms 10m s s