KTD1304 LUGUANG | Alldatasheet
Document overview
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Technical content
NPN Silicon Epitaxial Planar Transistor KTD1304
FEATURES
z High emitter-base voltage. z High reverse h FE z Low on resistance. A P P L I C A T I O N S z Audio muting application.
ORDERING INFORMATION
Type No. Marking Package Code KTD1304 MAX SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 12 V I C Collector Current -Continuous 300 mA I B Base Current 30 mA P C Collector Power Dissipation 200 mW T T stg Junction and Storage Temperature -55 to +150 ℃ http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 12 V Collector cut-off current I CBO V CB =25V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =12V,I C =0 0.1 μA DC current gain h FE V CE =2V,I C =4mA 200 800 Collector-emitter saturation voltage V CE(sat) I C =100mA, I B =10mA 0.25 V Base-emitter saturation voltage V BE(sat) I C =100mA, I B =10mA 1 V Transition frequency f T V CE =10V, I C = 1mA 60 MHz Collector output capacitance C ob V CB =10V,I E =0,f=1MHz 10 pF SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G
@ Ta=25℃ unless otherwise specified NPN Silicon Epitaxial Planar Transistor KTD1304 http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1 Device Package Shipping KTD1304 SOT-23 3000/Tape&Reel