KTD1304 SECOS | Alldatasheet
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Technical content
0.3 A, 25 V
NPN Plastic Encapsulated Transistor 01-June-2005 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
z High emitter-base voltage: VEBO=12V(Min) z low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage V CBO 25 V Collector to Emitter Voltage V CEO 20 V Emitter to Base Voltage V EBO 12 V Collector Current - Continuous I C 300 mA Collector Power Dissipation Pc 200 mW Junction, Storage Temperature T J, TSTG +150, -55 ~ +150 ℃ CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO 25 - - V I C = 100 uA BVCEO 20 - - V I C = 1 mA BVEBO 12 - - V I E = 100 uA ICBO - - 0.1 uA V CB = 25 V IEBO - - 0.1 uA V EB = 12 V hFE1 (FORWARD) 200 - 1000 V CE = 2 V, IC=4 mA hFE1 (REVERSE) 20 - - V CE = 2 V, IC=4 mA VCE(sat) - - 0.25 V I C =100 mA, IB=10 mA VBE(sat) - - 1 V I C =100 mA, IB=10 mA fT - 60 - MHz V CE = 10 V, IC = 1 mA, f = 100 MHz COB - 10 - pF V CB = 10 V, IE = 0, f = 1 MHz R(ON) - 0.6 - Ω VIN=0.3 V, IB=1mA, f=1KHz Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View
NPN Plastic Encapsulated Transistor 01-June-2005 Rev. A Page 2 of 2 CHARACTERISTIC CURVES KTD1304