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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors KTD1304 TRANSISTOR (NPN)

FEATURES

  • High emitter-base voltage
  • low on resistance MARKING: MAX ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100 μ A, I E =0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 12 V Collector cut-off current I CBO V CB =25 V, I E =0 0.1 μ A Emitter cut-off current I EBO V EB =12V, I C =0 0.1 μ A h FE (FOR) V CE =2V, I C =4 mA 200 1000 DC current gain h FE (REV) V CE = 2V, I C = 4mA 20 Collector-emitter saturation voltage V CE (sat) I C = 100mA, I B =10 mA 0.25 V Base-emitter saturation voltage V BE (sat) I C = 100mA, I B =10mA 1 V Transition frequency f T V CE =10V, I C = 1mA 100MHz

60 MHz

C ob V CB =10V,I E =0,f=1MHz 10 pF On resistance R (on) V in =0.3V,I B =1mA,f=1KH Z 0.6 Ω SOT-23 1. BASE 2. EMITTER 3.COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Oct,2014 JC(T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃

0.1 1 10 100 500 550 600 650 700 750 800 850 900 950 1000 0.1 1 10 100 0.1 1 10 100 100 120 140 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 1 10 100 200 400 600 800 0 5 10 15 20 100 01234567 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =100 T a =25 I C V BEsat 300 CAPACITANCE C (pF) REVERSE VOLTAGE V (V) C ob C ib f=1MHz IE=0 / IB=0 T a =25 o C V CB / V EB C ob / C ib 300 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) T a =100 T a =25 V CEsat —— I C 300 COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE T a ( ) P c —— T a COMMON EMITTER V CE =2V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 o C T a =100 o C I C h FE COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) I C f T V CE =10V T a =25 o C 16uA 18uA 20uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic 4uA 10uA 6uA 14uA 12uA 8uA I B =2uA www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Oct,2014 Typical Characteristics

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Oct,2014

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Oct,2014