KTD1304-3_15 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Transistors ■ Features
- High Emitter-Base Voltage :VEBO = 12V(Min)
- High Reverse hFE
- Low on Resistance ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 12 Collector Current - Continuous IC 300 Base Current IB 30 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 12 Collector-base cut-off current ICBO VCB=25 V , IE= 0 100 Emitter cut-off current IEBO VEB= 12V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1 hFE(1) VCE= 2V, IC= 4mA (FOR) 200 800 hFE(2) VCE= 2V, IC= 4mA (REV) 20 On resistance Ron IB=1mA,Vin=0.3V,f=1KHz 0.6 Ω Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 10 pF Transition frequency fT VCE= 10V, IC= 1mA 60 MHz DC current gain V V nA ■ Marking Marking J3Y NPN Transistors KTD1304 (KTD1304S) 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Transistors ■ Typical Characterisitics NPN Transistors KTD1304 (KTD1304S)