KTD1302 DGNJDZ | Alldatasheet

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Technical content

  1. COLLECTOR 3. EMITTER KTD1302 TRANSIST OR (NPN)

FEATURES

z Audio Muting Application z High Emitter-Base Voltage MAXIMUM RATINGS (Ta=25℃ unless other wise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Pa rameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO I C=0.1mA,IE= 0 25 V Co llector-emitter breakdown voltage V(B R)CEO I C=1 mA,IB= 0 20 V Emitter-b ase breakdown voltage V( BR)EBO I E=0.1mA,IC= 0 12 V Co llector cut-off current ICB O V CB= 25V,IE= 0 100 nA Emitter cut-off current IEBO VEB= 12V,IC= 0 100 nA hFE(1) (FO R) V CE=2 V, IC= 4mA 200 800 DC current gain hFE (2)(REV) V CE=2 V, IC= 4mA 20 Co llector-emitter saturation voltage VCE (sat) I C= 100mA,IB= 10mA 0.25 V Bas e-emitter saturation voltage VBE( sat) I C= 100mA,IB= 10mA 1 V Co llector output capacitance Cob VCB= 10V,IE=0, f=1MHz 10 pF T ransition frequency fT VCE= 10V,IC=1 mA, f=100MHz

60 MHz

O Collector-Emitter Voltage 20 V VEB O Emitter-Base V oltage 12 V IC Coll ector Current 300 mA PC Collector Power Dissipation 500 mW RθJA T hermal Resistance From Junction To Ambient 250 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~ +150 MARKING 1302 S OT-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., 1/3Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

M in Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. www.dgnjdz.com