KTD1302_15 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Tran sistors NPN Transistors KTD1302 ■ Features
- Small Flat Package
- Audio Muting Application
- High Emitter-Base Voltage 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 12 Collector Current - Continuous IC 300 mA Collector Power Dissipation PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 12 Collector-base cut-off current ICBO VCB= 25 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 12V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1 VCE= 2V, IC= 4mA (FOR) 200 800 VCE= 2V, IC= 4mA (REV) 20 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 10 pF Transition frequency fT VCE= 10V, IC= 1mA , f=100MHz 60 MHz V V uA DC current gain hFE ■ Marking Marking 1302