KTD1028 KEC | Alldatasheet
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KOREA ELECTRONICS CO.LTD. TECHNICAL DATA | EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES a ° + High DC Current Gain - 47 hre=800~3200 (Ver=5.0V, Ic=300mA). \\ \\ + Wide Area of Safe Operation. a |- + Low Collector Saturation Voltage eC as, © Verisan=0.17V (Ie=500mA, Iy=5.0mA). aL . aa yt Ppa x MAXIMUM RATINGS (Ta=25) | Wy > CHARACTERISTIC SYMBOL | RATING | UNIT “WH witli tin Lo Fs esoi | a =~ N 26 Collector-Emitter Voltage ra Chey, 1 be i ; , ; SE [a [010 ax | Emitter-Base Voltage 1. EMITTER TO-92L ELECTRICAL CHARACTERISTICS (Ta=25'C) CHARACTERISTIC TEST CONDITION Catosior Guoff Curent Vorb, 0 rm DC Current Gain ote Collector-Emitter Venta | 1c=500mA, Iy=5.0mA 017 | 030 | v Saturration Voltage Base-Emitter 7 an = 7 Note: hr Classification ‘A:800~ 1600, B:1200~2400, _C:2000~3200 1996. 8. 07 Revision No : 1 KEC 1/2
hrg — Ic hye —- Ic ed a Et A 2 iirc Il NAY, VCE = 2 g Eo eo 2S
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© ip EE 6p SH 10m 30m 100m 300m 1 35 10 10m 30m 100m 300m 1 35 10 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) a Vv g & Veet) ~ Ic Pe - Ta = 3 Zz > C—O 2 2 Sc oo oo 8 COREE ere eee Bee LL vetcune/eezoll ZU i) EPO asic ae ee ee a LOD) | | ff a EEN = Nase Sas! eet eee S ee 5 0003 ren tl 3 200 Ee NE eS Cee CO Tl ee @ 2 “001 003 01 03 1 38 10 ° 0 40 80 120 160 200 ® : COLLECTOR CURRENT Ic (A) AMBIENT TEMPERATURE Ta (‘C) Ic - Veg 1.0 7 Fg = = yeaan = ool eee
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& oo On TT aA oteceue 3 YH 5 0.4 LT \\ 6mA Poe © /474\\0\\ ce 7) Zoe | (2a eS keri t titi tt | COLLECTOR-EMITTER VOLTAGE Vcg (V) 1996. 8. 07 Revision No : 1 KEC 2/2