KTD1003_15 KEC | Alldatasheet
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Technical content
- 3. 22 1/2 SEMICONDUCTOR TECHNICAL DATA KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 4 HIGH CURRENT APPLICATION.
FEATURES
ᴌHigh DC Current Gain : hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25ᴱ) DIM A B D E G H K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05 SOT-89 C J G D 12 3 2. COLLECTOR (HEAT SINK) A C K J F MILLIMETERS H 1. BASE 3. EMITTER B E FF D +_ ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) Note : hFE Classification A:800ᴕ1600, B:1200ᴕ2400, C:2000ᴕ3200 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 100 nA DC Current Gain hFE(1) Note VCE=5.0V, IC=300mA 800 1500 3200 hFE(2) VCE=5.0V, IC=1.0A 400 - - Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=5.0mA - 0.17 0.30 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=5.0mA - 0.80 1.2 V Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - 18 30 pF Transition Frequency fT VCE=10V, IC=500mA, f=100MHz 150 250 - MHz Base-Emitter Voltage VBE VCE=5V, IC=100mA - 630 700 mV CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 8 V Collector Current IC 1.0 A Collector Power Dissipation PC 500 mW PC * 1 W Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ PC* : KTD1003 Mounted on Ceramic Substrate (250mm2x0.8t) L Type Name h RankFE Lot No. Marking
- 3. 22 2/2 KTD1003 Revision No : 4 h - I CCOLLECTOR CURRENT I (A) 10m FEDC CURRENT GAIN h I - VCC E CECOLLECTOR-EMITTER VOLTAGE V (V) C COLLECTOR CURRENT I (A) FE C 30m 100m 300m 1 3 10 5 100 300 500 10k V =10VCE CEV =5.0V CEV =2.0V 0.2 0.4 0.6 0.8 1.0 PULSED 10mA 5mA 4mA 3mA 2mA I =1mAB 6mA 7mA 8mA 9mA I - VCC E CECOLLECTOR-EMITTER VOLTAGE V (V) CCOLLECTOR CURRENT I (A) V CCOLLECTOR CURRENT I (A) BE(sat)V (V) CE(sat) C BE(sat)V - I BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE V (V)CE(sat) DC CURRENT GAIN h FE COLLECTOR CURRENT I (A)C h - IFE C 10k 500 300 100 51 031300m100m30m 10m V =5.0VCE Ta=75 C Ta=25 C Ta=-25 C 0.01 0.03 0.03 0.1 0.3 1 3 10 0.01 0.1 0.3 V : I /I =20BE(sat) BC V CE(sat) I /I =100C B PULSED 1.0 0.8 0.6 0.4 0.2 20161284 300µA 250µA 200µA 150µA 100µA 500µA I =50µAB