KTD1003 KEC | Alldatasheet
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Technical content
KOREA ELECTRONICS CO.LTD. TECHNICAL DATA | EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION.
FEATURES
+ High DC Current Gain A ‘ + hrr=800~3200.(Ver=5.0V, Ic=300mA). 4 L + Wide Area of Safe Operation. | ac + Low Collector Saturation Voltage — } 2 Verisa=0.17V (e=500mA, In=5.0mA). [| ];+- Iori { MAXIMUM RATINGS (Ta=25'C) I i “O10 CHARACTERISTIC oe Lt | Collector-Base Voltage hoy y 1 ase 9. exrren Collector Power Dissipation SOT-—89 Pc : KTD1003 Mounted on Ceramic Substrate (250mm’x0.8t) bre Rank | tot No. Type Name E ta ee Ll U U u ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN MAX. | UNIT Catosor Gu-off Caren Var, 0 Ea hea Note | Ves50V,_-B00mA DC Current Gain Saturation Voltage Base-Emitter 5 5 , _ . > ; Note = hre Classification ‘A:800~1600, B:1200~2400, __C:2000~3200 1998, 6. 15 Revision No : 3 KEC 1/2
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a 500 Fret ot - — 900 a 2a eee cares LL 2 Peet Q 100 en 40 ee 50 war ee 2 10m 30m 100m 300m 1 35 10 = i [_[ie=s0a_[ |_| COLLECTOR CURRENT I¢ (A) : 0.2 eto -] 0 4 8 12 16 20 a z yentcat) - Ic COLLECTOR-EMITTER VOLTAGE Vcg (V) g 3 CE(sat) 5 > 10 SS eee 8 z SSS Z E | | | $8083 eo TT e268 oi LUI ga | TT a =] —— aS Ee S Rat ee es mill ll 8 yo eee CT TI Q EI 0.01 0.03 0.1 0.3 1 3 10 * 3 COLLECTOR CURRENT Ic (A) oOo 1998. 6. 15 Revision No : 3 KEC 2/2