KTC601U_15 KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- 8. 29 1/3 SEMICONDUCTOR TECHNICAL DATA KTC601U EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 5 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES
hA super-minimold package houses 2 transistor. hExcellent temperature response between these 2 transistor. hHigh pairing property in hFE. hThe follwing characteristics are common for Q1, Q2. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC * 200 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 ɵ Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ɵ DC Current Gain hFE (Note) VCE=6V, IC=2ɶ 120 - 400 Collector-EmitterSaturation Voltage VCE(sat) IC=100ɶ, IB=10ɶ - 0.1 0.25 V Transition Frequency fT VCE=10V, IC=1ɶ 80 - - ʀ Collector Output Capacitance Cob VCB=10V, IE=0, f=1ʀ - 2 3.5 ʆ Noise Figure NF VCE=6V, IC=0.1ɶ, f=1ɿ, Rg=10ʄ - 1.0 10 ɦ * Total Rating Note : hFE Classification Y(4):120q240, GR(6):200q400 EQUIVALENT CIRCUIT (TOP VIEW)
- 8. 29 2/3 KTC601U Revision No : 5
- 8. 29 3/3 KTC601U Revision No : 5