KTC601U_15 KEXIN | Alldatasheet

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www.kexin.com.cn 1 Transistors NPN Transistors KTC601U ■ Features

  • Excellent temperature response between these 2 transistor.
  • High pairing property in hFE.
  • The follwing characteristics are common for Q1, Q2. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150 Base Current IB 30 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 DC current gain hFE VCE= 6V, IC= 2 mA 120 400 Noise Figure NF VCE=6V, IC=0.1mA, f=1KHz , Rg=10KΩ 10 dB Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 3.5 pF Transition frequency fT VCE= 10V, IC= 1mA 80 MHz V V uA ■ Classification of hfe Type KTC601U-Y KTC601U-G Range 120-240 200-400 Marking LY LG 2 3 5 4 1. Q BASE 2. Q , Q EMITTER 3. Q BASE 4. Q COLLECTOR 5. Q COLLECTOR SOT-353 Unit: mm 1.3+0.1 -0.1 0.65 0.525 1.25+0.1 -0.1 0.36 0.1+0.05 -0.02 0.1m ax0.95+0.05 -0.05 2.3+0.15 -0.15 0.3+0.1 -0.1 2.1+0.1 -0.1

www.kexin.com.cn2 Transistors NPN Transistors KTC601U ■ Typical Characterisitics CCOLLECTOR CURRENT I (mA) DC CURRENT GAIN h FE 310.30.1 COLLECTOR CURRENT I (mA)C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V h - I V - I CCOLLECTOR CURRENT I (mA) 0.1 0.1 BASE-EMITTER SATURATION BASE CURRENT I (µA)B 0.3 BASE-EMITTER VOLTAGE V (V)BE I - Vf - I CCOLLECTOR CURRENT I (mA) 0.1 TTRANSITION FREQUENCY f (MHz)10 COLLECTOR-EMITTER SATURATION0.01 0.1 COLLECTOR CURRENT I (mA)C V - I 1 2 3 4 5 6 7 120 160 200 240 I =0.2mAB COMMON EMITTER Ta=25 C FE C 10 30 100 300 100 300 500 CE(sat) C VOLTAGE V (V)CE(sat) 0.3 1 3 10 30 100 300 0.03 0.05 0.1 0.3 0.5 Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER I /I =10C B CBE(sat) VOLTAGE V (V)BE(sat) 0.3 1 10 30 100 3003 0.3 0.5 COMMON EMITTER I /I =10 Ta=25 C C B T C 0.3 1 3 10 30 100 300 100 300 500 COMMON EMITTER V =10V Ta=25 C CE B BE 100 300 0.5 1.0 2.03.0 5.06.0 COMMON EMITTER Ta=100 C Ta=25 C Ta=-25 C V =6VCE CEV =1V COMMON EMITTER V =6V CE Ta=100 CTa=25 CTa=-2 5 C

www.kexin.com.cn 3 Transistors NPN Transistors KTC601U ■ Typical Characterisitics COLLECTOR POWER DISSIPATION P (mW) C AMBIENT TEMPERATURE Ta ( C) Pc - Ta 25 50 75 100 125 100 150 200 250 150