DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
WEJ ELECTRONIC CO.,LTD KTC3200 TRANSISTOR (NPN) FEATURE Power dissipation P CM: 0 . 6 2 5 W ( T a mb = 2 5 ℃ ) Collector current I CM: 0 . 1 A Collector-base voltage V (BR)CBO: 1 2 0 V Operating and storage junction temperature range T stg: -55 ℃ to +150 ℃ T J : 1 5 0 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, I E=0 120 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO I E= 100µA, IC=0 5 V Collector cut-off current ICBO V CB= 120V, IE=0 0.1 µA Emitter cut-off current IEBO V EB= 5V, IC=0 0.1 µA DC current gain hFE V CE=6V, IC= 2mA 200 700 Collector-emitter saturation voltage VCE(sat) I C= 10mA, IB= 1 mA 0.3 V Base-emitter voltage VBE V CE= 6V, IC= 2mA 0.65 0.8 V Transition frequency f T VCE= 6 V, IC= 1mA F=30MHz
100 MHz
- EMITTER 2. COLLECTOR 3. BASE KTC3200 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. R o HS