KTC3198 TGS | Alldatasheet
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Technical content
A,Dec,2010 TO – 92 1.EMITTER 2.COLLECTOR 3.BASE TO-92 Plastic-Encapsulate Transistors KTC3198 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application z Complementary to KTA1266. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C= 0.1mA ,IE=0 60 V Collector-emitter breakdown voltage V(BR) CEO I C=5mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO I E=0.1mA,IC=0 5 V Collector cut-off current ICBO V CB=60V,IE=0 0.1 μA Emitter cut-off current IEBO V EB=5V,IC=0 0.1 μA hFE(1) V CE=6V, IC=2mA 70 700 DC current gain hFE(2) V CE=6V, IC=150mA 25 Collector-emitter saturation voltage VCE(sat) I C=100mA,IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) I C=100mA,IB=10mA 1 V Transition frequency fT V CE=10V,IC=1mA 80 MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF CLASSIFICATION OF hFE(1) RANK O Y GR BL RANGE 70-140 120-240 200-400 300-700 Symbo Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.15 A PC Collector Power Dissipation 0.625 W RθJA Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TIGER ELECTRONIC CO.,LTD