DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
0.15A , 60V NPN Plastic Encapsulated Transistor 21-Feb-2014 Rev.C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector Current I CM 150 mA Power Dissipation P CM 625 mW Junction, Storage Temperature T J, TSTG 125, -55~125 °C
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V (BR)CBO 60 - - V I C=100μA, IE=0 Collector to Emitter Breakdown Voltage V (BR)CEO 50 - - V I C=5mA, IB=0 Emitter to Base Breakdown Voltage V (BR)EBO 5 - - V I E=100μA, IC=0 Collector Cut-Off Current I CBO - - 0.1 μA V CB=60V, IE=0 Emitter Cut-Off Current I EBO - - 0.1 μA V EB=5V, IC=0 70 400 V CE=6V, IC=2mA DC Current Gain h FE 25 100 V CE=6V, IC=150mA Collector to Emitter Saturation Voltage V CE(sat) - 0.1 0.25 V I C=100mA, IB=10mA Base to Emitter Saturation Voltage V BE(sat) - - 1 V I C=100mA, IB=10mA Transition Frequency f T 80 - - MHz V CE=10V, IC=1mA, f=30MHz TO-92 Emitter Collector Base A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1.10 1.40 D 3.30 3.81 J 2.42 2.66 E 0.36 0.56 K 0.36 0.76
0.15A , 60V NPN Plastic Encapsulated Transistor 21-Feb-2014 Rev.C Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES