KTC3198_15 KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- 7. 08 1/3 SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). hLow Noise : NF=1dB(Typ.). at f=1kHz. hComplementary to KTA1266. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) Note : hFE(1) Classification O:70q140, Y:120q240, GR:200q400, BL:300~700 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Collector Power Dissipation *PC 625 mW 400 Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 ǺA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ǺA DC Current Gain hFE(1) (Note) VCE=6V, IC=2mA 70 - 700 hFE(2) VCE=6V, IC=150mA 25 100 - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Base Intrinsic Resistance rbb’ VCB=10V, IE=1mA, f=30MHz - 50 - ʃ Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kʃ, f=1kHz - 1.0 10 dB *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW
- 7. 08 2/3 KTC3198 Revision No : 3
- 7. 08 3/3 KTC3198 Revision No : 3