KTC3197 SECOS | Alldatasheet
Document overview
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Technical content
0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente 26-Dec-2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 High Gain: Gpe=33dB(Typ.) (f=45MHz) /circle6 Good Linearity of h FE ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO 30 V Collector to Emitter Voltage V CEO 25 V Emitter to Base Voltage V EBO 4 V Collector Current - Continuous I C 50 mA Collector Power Dissipation P C 625 mW Junction, Storage Temperature T J, T STG 150, -55~150 ° C ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 30 - - V I C =1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 25 - - V I C =10mA, I B=0 Emitter to Base Breakdown Voltage V (BR)EBO 4 - - V I E=1mA, I C =0 Collector Cut – Off Current I CBO - - 0.1 µA V CB =30V, IE=0 Emitter Cut – Off Current I EBO - - 0.1 µA V EB =3V, I C =0 DC Current Gain h FE 20 - 200 V CE =12.5V, I C =12.5mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.2 V I C =15mA, I B=1.5mA Base to Emitter Saturation Voltage V BE(sat) - - 1.5 V I C =15mA, I B=1.5mA Collector Output Capacitance C ob 0.8 - 2 pF V CB =10V, IE=0, f=1MHz Collector-Base Time Constant C C • rbb - - 25 pS V CB =10V, I E= -1mA, f=30MHz Transition Frequency f T 300 - - MHz VCE =12.5V, I C =12.5mA Power Gain Gpe 28 - 36 dB V CE =12.5V, IE=12.5mA, f=45MHz REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1. 10 1.40 D 3.30 3.81 J 2.42 2.66 E 0.36 0.56 K 0.36 0.76 11 11 Emitter 22 22 Collector 33 33 Base TO -92 Base Emitter Collector