KTC3194R GWSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 2

Technical content

TO – 92 1.EMITTER 2.COLLECTOR 3.BASE

FEATURES

z General Purpose Switching Application MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbo Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 4 V I C Collector Current 0.02 A P C Collector Power Dissipation 0.625 W R θJA Thermal Resistance From Junction To Ambient 200 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55~+150 Equivalent Circuit Plastic-Encapsulate Transistors KTC3194R TRANSISTOR(NPN) /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 a T =25 /g1071 unless otherwise specified Para meter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 0.1mA ,I E =0 40 V Collector-emitter breakdown voltage V (BR) CEO I C =1mA,I B =0 30 V Emitter-base breakdown voltage V (BR)EBO I E =0.1mA,I C =0 4 V Collector cut-off current I CBO V CB =40V,I E =0 0.5 μA Emitter cut-off current I EBO V EB =4V,I C =0 0.5 μA DC current gain h FE V CE =6V, I C =1mA 40 200 Collector-emitter saturation voltage V CE(sat) I C =15mA,I B =1.5mA 0.2 V Transition frequency f T V CE =6V,I C =1mA

550 MHz

RANGE 40-80 70-140 100-200

TRANSISTOR(NPN) TO-9 PACKAGE OUTLINE Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP