KTC3190_15 KEC | Alldatasheet

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  1. 6. 24 1/2 SEMICONDUCTOR TECHNICAL DATA KTC3190 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. FEATURE ᴌLow Noise Figure : NF=3.5dB(Max.) (f=1MHz). MAXIMUM RATING (Ta=25ᴱ) TO-92 DIM MILLIMETERS A B C D F G H J K L

4.70 MAX

4.80 MAX

3.70 MAX

0.45 1.00 1.27 0.85 0.45 14.00 0.50

0.55 MAX

2.30 D 1 2 3 B AJ K G H F F L E C E C M N

0.45 MAXM

1.00N 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ Note : hFE Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 ỌA Emitter Cut-off Current IEBO VEB=2V, IC=0 - - 1.0 ỌA DC Current Gain hFE(Note) VCE=12V, IC=2mA 40 - 240 Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.4 V Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA - - 1.0 V Transition Frequency fT VCE=10V, IC=2mA 80 120 - MHz Reverse Transfer Capacitance Cre VCB=10V, IE=0, f=1MHz - 2.2 3.0 pF Collector-Base Time Constant Ccᴌrbb’ VCE=10V, IE=-1mA, f=30MHz - 30 50 pS Noise Figure NF VCE=10V, IC=1mA, f=1MHz, Rg=50ή - 2.0 3.5 dB

  1. 6. 24 2/2 KTC3190 Revision No : 0 FORWARD TRANSFER ADMITTANCE5 300 COLLECTOR-EMITTER VOLTAGE V (V)CE y , θ - Vy - I EEMITTER CURRENT I (mA) -0.1 -0.3 -0.5 re REVERSE TRANSFER ADMITTANCE REVERSE TRANSFER ADMITTANCE3 re 100 COLLECTOR-EMITTER VOLTAGE V (V)CE y - V y θ - I EEMITTER CURRENT I (mA) -0.1 -0.3 -0.5 -1 100 re E y (µS) -1 -3 -5 100 COMMON EMITTER V =6V f=1MHz Ta=25 C θ =-90 C CE re fe re CE 468 1 0 1 2 1 4 1 6 y (mS)fe 100 feTRANSFER ADMITTANCE θ ( ) PHASE ANGLE OF FORWARD -0.5 -10 -30 COMMON EMITTER I =-1mA f=1MHz Ta=25 C E y fe fe re CE y (µS) 4681 0 1 2 1 4 1 6 COMMON EMITTER I =-1mA f=1MHz Ta=25 C θ =-90 E re fe Efe, -3 -5 fey (mS) FORWARD TRANSFER ADMITTANCE PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE θ ( )fe -0.5 -10 COMMON EMITTER V =6V f=1MHz Ta=25 C CE y R, O, Yfe feθ R, O, Y θ y PARAMETERS (Typ.) (COMMON EMITTER VCE=6V, IE=1mA, f=1MHz) CHARACTERISTIC SYMBOL KTC3190-R KTC3190-O KTC3190-Y UNIT Input Conductance gie 0.5 0.35 0.22 mS Input Capacitance Cie 50 48 46 pF Output Conductance goe 4 5 6.5 ỌS Output Capacitance Coe 3.7 3.4 3.2 pF Forward Transfer Admittance |yfe| 36 36 36 mS Phase Angle of Forward Transfer Admittance Ỉfe -1.6 -1.6 -1.6 ᴮ Reverse Transfer Admittance |yre| 14 14 14 ỌS Phase Angle of Reverse Transfer Admittance Ỉre -90 -90 -90 ᴮ