KTC3072D_15 KEC | Alldatasheet

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Technical content

  1. 3. 27 1/3 SEMICONDUCTOR TECHNICAL DATA KTC3072D/L EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit)

FEATURES

Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A) High Performance at Low Supply Voltage. MAXIMUM RATING (Ta=25 DPAK DIM MILLIMETERS A B C D F H I J K L 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1

1.00 MAX

2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 E 0.91 0.10M 0.90 0.1O A C D B E K I J Q H F F M O P L 123 1. BASE 2. COLLECTOR 3. EMITTER 1.00 0.10P

0.95 MAXQ

ELECTRICAL CHARACTERISTICS (Ta=25 Note 1 : hFE(1) Classification O:120 240, Y:200 400, GR:350 700 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse (Note1) ICP 8 Collector Power Dissipation PC 1.0 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note 1: Pulse Width 100mS, Duty Cycle 30% CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V Collector Emitter Breakdown Voltage (1) V(BR)CEO IC=1mA, IB=0 20 - - V Emitter Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 7 - - V Collector Cutoff Current ICBO VCB=20V, IE=0 - - 100 nA Emitter Cutoff Current IEBO VEB=7V, IC=0 - - 100 nA DC Current Gain hFE(1)(Note1) VCE=2V, IC=0.5A 120 - 700 hFE(2) VCE=2V, IC=2A 100 - - Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=60mA(Pulse) - - 0.4 V Transition Frequency fT VCE=6V, IC=50mA 20 100 - MHz Collector Output Capacitance Cob VCB=20V, f=1MHz, IE=0 - - 50 pF DIM MILLIMETERS IPAK DB Q E H F F C A P L I J 123 A B C D E F G H I J L P Q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1

1.0 MAX

2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1

0.90 MAX

G 1. BASE 2. COLLECTOR 3. EMITTER K 2.0 0.2 K

  1. 3. 27 2/3 KTC3072D/L Revision No : 3 Pc - Ta AMBIENT TEMPERATURE Ta ( C) 04 0 20 0.2 C COLLECTOR POWER DISSIPATION P (W) COLLECTOR CURRENT I (A) C 0.4 0.40 COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V COLLECTOR CURRENT I (A) C 0.40.20 BASE-EMITTER VOLTAGE V (V)BE BECI - V TRANSITION FREQUENCY f (MHz)T EMITTER CURRENT I (A)E ETf - Ih - IFE C CCOLLECTOR CURRENT I (A) 0.01 0.03 100 FE DC CURRENT GAIN h I - VC CE(sat) CE(sat) COLLECTOR-EMITTER SATURATION 0 0.2 0.4 C COLLECTOR CURRENT I (A) 60 80 100 120 140 160 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.4 Ta=25 C 2mA 3mA 4mA 5mA 6mA I =1mAB 7mA 0.6 0.8 1.0 1.2 V =10V Ta=25 C CE VOLTAGE V (V) 0.6 0.8 1.0 1.2 I /I =30 Ta=25 C C B 100 0.1 0.3 1 3 10 200 300 400 500 600 700 800 V =2V Ta=25 C CE 10310.30.10.030.01 200 300 400 V =6V Ta=25 C CE Ta=25 C
  1. 3. 27 3/3 KTC3072D/L Revision No : 3 COLLECTOR CURRENT I (A)C 0.01 100.1 COLLECTOR-EMITTER VOLTAGE V (V)CE SAFE OPERATION AREA C - Vob CB CBCOLLECTOR BASE VOLTAGE V (V) 13 1 0 100 ob OUTPUT CAPACITANCE C (pF) 5 30 50 100 I =0 f=1MHz Ta=25 C E 0.3 1 3 30 100 0.03 0.1 0.3 100 I MAX.(PULSED)*C I MAX. C t=10ms t=1s * *SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE.