KTB985_15 KEC | Alldatasheet

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  1. 11. 30 1/3 SEMICONDUCTOR TECHNICAL DATA KTB985 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT

FEATURES

hAdoption of MBIT processes. hLow collector-to-emitter saturation voltage. hFast switching speed. hLarge current capacity and wide ASO. hComplementary to KTD1347. MAXIMUM RATING (Ta=25) DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L

7.20 MAX

5.20 MAX

2.50 MAX

0.60 MAX

1.27

1.70 MAX

0.55 MAX

14.00 0.50

0.35 MIN

0.75 0.10 F J M O Q 1.25 Φ1.50

0.10 MAX

DEPTH:0.2 123 B A C Q K FF M M NN O H L J D C N G P HH E D H R S 12.50 0.50R 1.00S

1.15 MAX

ELECTRICAL CHARACTERISTICS (Ta=25) Note : hFE (1) Classification A:100q200, B:140q280, C:200q400 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Vollector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -3 A Collector Current (Pulse) ICP -6 A Collector Power Dissipation PC 1 W Junction Temperature Tj 150  Storage Temperature Range Tstg -55q150  CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1 ɵ Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 ɵ DC Current Gain hFE (1) (Note) VCE=-2V, IC=-100ɶ 100 - 400 hFE (2) VCE=-2V, IC=-3A 35 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-100ɶ - -0.35 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-100ɶ - -0.94 -1.2 V Transition Frequency fT VCE=-10V, IC=-50ɶ - 150 - ʀ Collector Output Capacitance Cob VCB=-10V, IE=0, f=1ʀ - 39 - ʆ Switching Time Turn-on Time ton - 70 - nSStorage Time tstg - 450 - Fall Time tf - 35 - IB2 470µF 5V -25V -10I 1=10I =I =1ABB 2 C 100µF VR I B1PW=20µs DC 1% R8 INPUT

  1. 11. 30 2/3 KTB985 Revision No : 1 COLLECOTR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VCE DC CURRENT GAIN hFE -0.3-0.1-0.03-0.01 COLLECTOR CURRENT IC (A) hFE - IC COLLECTOR EMITTER VOLTAGE VCE (V) 0- 2- 4- 6 COLLECTOR CURRENT IC (A) -1.0 -2.0 -3.0 -4.0 -5.0 I =0B -1 -3 -10 100 300 500 V =-2VCE -8 -10 -12 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -0.5 -1.5 -2.5 -3.5 -4.5 -5mA -10mA -20mA -50mA -100mA -200mA COLLECTOR CURRENT IC (A) -0.8 -1.6 -2.4 -3.2 BASE EMITTER VOLTAGE VBE (V) -0.4 IC - VBE -0.4 -1.2 -2.0 -2.8 V =-2VCE Ta=75 C 25 C -25 C IC - VCE -14 -16 -18 -20 -2.0 I =0B -2mA -4mA -6mA -8mA -10mA -12mA-14mA Ta=75 C Ta=25 C Ta=-25 C -0.01 VOLTAGE VCE(sat) (mV) -10 -100 -30 -50 -500 -300 -1K COLLECTOR CURRENT IC (A) VCE(sat) - IC I /I =20C B Ta=-25 C Ta=25 C Ta=75 C COLLECTOR EMITTER SATURATION BASE-EMITTER SATURATION COLLECTOR CURRENT IC (A) -0.03-0.01 -0.1 -0.5 -0.3 -10 VBE(sat) - IC CI /I =20 VOLTAGE VBE(sat) (V) Ta=-25 C Ta=75 C Ta=25 C B
  1. 11. 30 3/3 KTB985 Revision No : 1 1.2 COLLECTOR DISSIPATION PC (W) 0.8 1.0 0.4 0.2 0.6 02 0 12040 60 100 80 160 140 -0.03 COLLECTOR CURRENT IC (A) GAIN-BANDWIDTH PRODUCT fT (MHz) -0.01 1.8 1.6 1.4 500 100 300 V =10V -1-0.3-0.1 Pc - Ta -3 -10 CE fT - IC COLLECTOR CURRENT IC (A) COLLECTOR EMITTER VOLTAGE VCE (V) Ta=25 C ONE PULSE -0.3 -0.05 -0.5 -0.3 -0.1 -0.03 -0.02 -0.1 DC Operation -1 -3 -10 -100 -30 SAFE OPERATING AREA COLLECTOR BASE VOLTAGE VCB (V) OUTPUT CAPACITANCE Cob (pF) I MAX. CP -0.3-0.1 -10 I C -10-3-1 100 ms 10ms 1ms 100 Cob - VCB f=1MHz -30 -100 AMBIENT TEMPERATURE Ta ( C)