KTB817B KEC | Alldatasheet
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Technical content
- 3. 18 1/3 SEMICONDUCTOR TECHNICAL DATA KTB817B TRIPLE DIFFUSED PNP TRANSISTOR Revision No : 0 HIGH POWER AMPLIFIER APPLICATION.
FEATURES
hComplementary to KTD1047B. hRecommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) Note : hFE(1) Classification O:60q120, Y:100q200 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V Collector Current DC IC -12 A Pulse ICP -15 Collector Power Dissipation (Tc=25) PC 100 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -0.1 mA Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 mA DC Current Gain hFE (1) (Note) VCE=-5V, IC=-1A 60 - 200 hFE 2 VCE=-5V, IC=-6A 20 - Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-1A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A - 15 - MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 300 - pF Turn On Time ton VCC=-20V IC=1A=10hIB1=-10hIB2 RL=20ʃ - 0.25 - ǺSFall Time tf - 0.53 - Storage Time tstg - 1.61 -
- 3. 18 2/3 KTB817B Revision No : 0
- 3. 18 3/3 KTB817B Revision No : 0