KTB764 KEC | Alldatasheet

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Technical content

  1. 11. 30 1/3 SEMICONDUCTOR TECHNICAL DATA KTB764 TRIPLE DIFFUSED PNP TRANSISTOR Revision No : 2 VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE

FEATURES

ᴌHigh Voltage : VCEO=-50V(Min.). ᴌHigh Current : IC(Max.)=-1A. ᴌHigh Transition Frequency : fT=150MHz(Typ.). ᴌWide Area of Safe Operation. ᴌComplementary to KTD863. MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS A B D E G H K L 1. EMITTER 2. COLLECTOR 3. BASE P TO-92L

7.20 MAX

5.20 MAX

2.50 MAX

0.60 MAX

1.27

1.70 MAX

0.55 MAX

14.00 0.50

0.35 MIN

0.75 0.10 F J M O Q 1.25 Φ1.50

0.10 MAX

DEPTH:0.2 123 B A C Q K FF M M NN O H L J D C N G P HH E D H R S 12.50 0.50R 1.00S

1.15 MAX

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) Note : hFE(1) Classification O:60ᴕ120, Y:100ᴕ200, GR:160ᴕ320 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -1 A Pulse ICP -2 Collector Power Dissipation PC 1 W Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -1 ỌA Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 ỌA DC Current Gain hFE(1) VCE=-2V, IC=-50mA 60 - 320 hFE(2) VCE=-2V, IC=-1A 30 - - Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -50 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V Transition Frequency fT VCE=-10V, IC=-50mA - 150 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 20 - pF

  1. 11. 30 2/3 KTB764 Revision No : 2 COLLECTOR OUTPUT CAPACITANCE ob COLLECTOR-BASE VOLTAGE V (V)CB V - I CCOLLECTOR CURRENT I (mA) CCOLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) CE I - VCC E -2 -4 -6 -200 -400 -600 -800 CE(sat) C I =0mAB COLLECTOR CURRENT I (mA) DC CURRENT GAIN hFE C h - IFE C C (pF) TRANSITION FREQUENCY f (MHz) COLLECTOR CURRENT I (mA)C T f - ITC CE(sat) COLLECTOR-EMITTER SATURATION -10 -12 -1000 I =-1mAB I =-2mAB I =-3mAB I =-4mAB I =-6mAB I =-8mAB I =-10mAB COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) -600 -400 -200 -0.2 -1000 -800 C -1.0-0.4 -0.6 I =0mA -0.8 B -1.2 CE I - VC CE I =-2mAB I =-4mAB I =-6mAB I =-10mAB I =-20mAB I =-30mAB I 50mA B -1 -3 -1K -5K -100-10 -30 -300 100 300 500 1K COMMON EMITTER Ta=25 C V =-2VCE 100 C - Vob CB COMMON EMITTER f=1MHz Ta=25 C -1 -3 -10 -100 -300-30 100

300 COMMON EMITTER

Ta=25 C V =-10VCE -10-1 -0.01 -0.03 -0.05 -0.1 -0.3 -1.0 -0.5 COMMON EMITTER Ta=25 C VOLTAGE V (V) I /I =10 C B

  1. 11. 30 3/3 KTB764 Revision No : 2 COLLECTOR POWER DISSIPATION0 AMBIENT TEMPERATURE Ta ( C) Pc - TaSAFE OPERATING AREA CECOLLECTOR-EMITTER VOLTAGE V (V) -0.5 -1 -3 -10 -0.01 CCOLLECTOR CURRENT I (A) -30 -100-5 -50 -0.005 -0.03 -0.05 -0.1 -0.3 -0.5 I CP CI MAX. DC OPERATION 1msec 10m sec 100msec 1sec Pc (mW) 20 40 60 80 100 120 140 160 200 400 600 800 1.2k 1PULSE