KTB2510_08 KEC | Alldatasheet
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Technical content
- 4. 18 1/3 SEMICONDUCTOR TECHNICAL DATA KTB2510 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 2 HIGH POWER AMPLIFIER DARLINGTON APPLICATION.
FEATURES
hRecommended for 60W Audio Amplifier Output Stage. MAXIMUM RATING (Ta=25) 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N) C G L K H A D B E F I d P PT M J Q 123 A 15.9 MAX MILLIMETERSDIM B 4.8 MAX C20.0 0.3 D 2.0 0.3 d 1.0+0.3/-0.25 E2 . 0 F 1.0 G 3.3 MAX H9 . 0 I4 . 5 J 2.0 K 1.8 MAX L 20.5 0.5 P 5.45 0.2 Q Φ 3.2 0.2 T 0.6+0.3/-0.1 2.8M ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A Collector Power Dissipation (Tc=25) PC 100 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 ǺA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 ǺA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-30mA, IB=0 -150 - - V DC Current Gain hFE VCE=-4V, IC=-7A 5000 12000 20000 Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V Transition Frequency fT VCE=-12V, IC=-2A - 50 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 230 - pF COLLECTOR BASE EMITTER 70Ω EQUIVALENT CIRCUIT
- 4. 18 2/3 KTB2510 Revision No : 2
- 4. 18 3/3 KTB2510 Revision No : 2