KTB1424_07 KEC | Alldatasheet
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Technical content
- 5. 21 1/1 SEMICONDUCTOR TECHNICAL DATA KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 2 GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) Complementary to KTD2424. MAXIMUM RATING (Ta=25 DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 2.70 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ Φ3.2 0.2+_ 10.0 0.3+_ 15.0 0.3+_ 3.0 0.3+_ 4.5 0.2+_ 2.54 0.1+_ +2.6 0.2_ 6.8 0.1+_ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -3 A Base Current IB -0.5 A Collector Power Dissipation (Tc=25 ) PC 25 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -20 A Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -100 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -60 - - V DC Current Gain hFE(1) VCE=-2V, IC=-1A 3000 - - hFE(2) VCE=-2V, IC=-3A 1000 - - Saturation Voltage Collector-Emitter VCE(sat) IC=-3A, IB=-30mA - - -1.5 V Base-Emitter VBE(sat) IC=-3A, IB=-30mA - - -2.8