KTB1423_15 KEC | Alldatasheet

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  1. 5. 21 1/2 SEMICONDUCTOR TECHNICAL DATA KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 2 SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.

FEATURES

High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.) Complementary to KTD1413. MAXIMUM RATING (Ta=25 DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 2.70 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ Φ3.2 0.2+_ 10.0 0.3+_ 15.0 0.3+_ 3.0 0.3+_ 4.5 0.2+_ 2.54 0.1+_ +2.6 0.2_ 6.8 0.1+_ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEB0 -5 V Collector Current DC IC -5 A Pules ICP -8 Base Current IB -0.12 A Collector Power Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -1 mA Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -2 mA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -120 - - V DC Current Gain hFE(1) VCE=-3V, IC=-0.5A 1000 - - hFE(2) VCE=-3V, IC=-3A 1000 - - Collector-Emitter Saturation Voltage VCE(sat) 1 IC=-3A, IB=-12mA - - -2 V VCE(sat) 2 IC=-5A, IB=-20mA - - -4 Base-Emitter Voltage VBE VCE=-3V, IC=-3A - - -2.5 V Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 300 pF C B E R 8kΩ 120Ω R1 2 =∼ =∼ EQUIVALENT CIRCUIT

  1. 5. 21 2/2 KTB1423 Revision No : 2 COLLECTOR POWER DISSIPATION0 C AMBIENT TEMPERATURE Ta ( C) Pc - Ta SATURATION VOLTAGE CE(sat) -0.5 -3-1-0.3-0.1 COLLECTOR CURRENT I (A)C V , V - Ih - I CCOLLECTOR CURRENT I (A) -0.1 -0.3 -1 -3 100 FEDC CURRENT GAIN h CAPACITANCE C , Cob(pF) -100-10-1-0.1 COLLECTOR-BASE VOLTAGE V (V)CB C , C - V , V SAFE OPERATING AREA CECOLLECTOR-EMITTER VOLTAGE V (V) -1 -3 -10 -300 -0.01 CCOLLECTOR CURRENT I (A) R - t wPULSE WIDTH t (S) 0.1 th(t) TRANSIENT THERMAL RESISTANCE FE C -10 300 500 10k V =-3VCE CE(sat) BE(sat), C V , V (V)BE(sat) -10 -20 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 I /I =250C B V BE(sat) CE(sat)V ob ib CB EB ib(pF) EBEMITTER-BASE VOLTAGE V (V) -30-3-0.3 100 300 500 f=1MHz Cib obC -30 -100 -0.03 -0.05 -0.1 -0.3 -0.5 -10 -20 SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE I MAX.(PULSED)C * CI MAX. (CONTINUOUS) DC OPERATION Tc=25 C 100µS 1mS 10mS * V MAX.CEO th(t) w R ( C/W) Ta=25 C NO HEAT SINK Tc=25 C INFINITE HEAT SINK -3 -2 0.3 100 P (W) 25 50 75 100 125 150 175 Tc=Ta INFINITE HEAT SINK NO HEAT SINK