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WEJ ELECTRONIC CO.,LTD KTB1366 TRANSISTOR (PNP)
FEATURES
P C M : 2 W ( T a mb = 2 5 ℃ ) Collector current I C M : - 3 A Collector-base voltage V (BR)CBO: - 6 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-50mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -7 V Collector cut-off current ICBO VCB=-60V, IE=0 -100 µA Emitter cut-off current IEBO VEB=-7V, IC=0 -100 µA hFE(1) VCE=-5V, IC=-0.5A 60 200 DC current gain hFE(2) VCE=-5V, IC=-3A 20 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-0.2A -1 V Base-emitter voltage VBE VCE=-5V, IC=-0.5A -1 V Transition frequency fT V CE=-5V, IC=-0.5A 9 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 150 pF Fall time tf 0.5 µ s Storage time ts IC=-2A, I B1=-IB2=-0.2A VCC=-30V 1.7 µ s CLASSIFICATION OF h FE(1) Rank O Y Range 60-120 100-200 Marking 1 2 3 TO-220F 1. BASE 2. COLLECTOR 3. EMITTER KTB1366 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. R o HS