KTB1124

KTB1124 DGNJDZ | Alldatasheet

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Collector-Emitter Voltage -50 V Collector-Base Voltage -60 V 100-200 140-280 200-400 HXA HXB HXC A B C Complementary the KTD1624 =-3A/-0.6A). Medium power transistor(-60V,-3A) FEA TURES z Low VCE(SA T)=-0.5V(T yp.) (IC/IB z APPLICA TIONS z Epitaxial planar type. z PNP silicon transistor. MAXIMUM RA TING @ T a=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC Collec tor Current –DC - P u l s e A PC Collector po wer dissipation 500 mW Tj,Tstg Junction and Storage Temperatur e -55 to +150 ℃ DONGGUAN NANJING ELECTRONICS LTD., w ww.dgnjdz.comwww.dgnjdz.com KTB1124 SO T-89-3L . BASE 2. COLLECTOR 3. EMITTER CL ASSIFICATION OF hFE(1) RA NK RA NGE M ARKING Pulse test: pulse width 300 duty cycle 2.0%. All data s heet.com

=-0.1A -0.5 -0.8 V =-40V I =0 39 pF =-0.05A, =-10V,I =-0.1A 100 400 =-2V I =0 -6 V =0 -50 V =0 -60 V ELECTRICAL CHARACTERISTICS @ T a=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-ba se breakdown voltage V (BR)CBO IC=-50μA IE Collector-em itter breakdown voltage V (BR)CEO IC=-1mA IB Emitter-base breakdow n voltage V (BR)EBO IE=-50μA IC Collector cut-off current ICBO VCB E=0 -1 μA Emitter cut-off current IEBO VEB=-4V ,IC=0 -1 μA DC c urrent gain hFE VCE C Collector-em itter saturation voltage V CE(sa t) IC=-2A IB Transition frequency fT VCE C f=30MHz Output Capa citance Cobo VCB=-10V f=1.0MHz IE w ww.dgnjdz.comwww.dgnjdz.com Medium power transistor(-60V,-3A) KTB1124 All data s heet.com

CHARACTERISTICS @ T a=25℃ unless otherwise specified w ww.dgnjdz.comwww.dgnjdz.com Medium power transistor(-60V,-3A) KTB1124 COLLECOTR CURRENT I (A) C COLLECTOR-EMITTER VOLTAGE V (V)CE CECI - V DC CURRENT GAIN h FE -0.3-0.1-0.03-0.01 COLLECTOR CURRENT I (A)C h - I CECOLLECTOR EMITTER VOLTAGE V (V) 2- 4- 6 COLLECTOR CURRENT I (A) -0.4 -1.0 -2.0 -3.0 -4.0 -5.0 I =0B FE C -3 -10 100 300 500 V =-2VCE -10 -12 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -0.5 -1.5 -2.5 -3.5 -4.5 -5mA -10mA -20mA -50mA -100mA -200mA COLLECTOR CURRENT I (A) -0.8 -1.6 C -2.4 -3.2 BASE EMITTER VOLTAGE V (V) -0.4 I - VC BE BE -0.2 -0.4 -1.2 -2.0 -2.8 V =-2VCE Ta=75 C C -25 C C CEI - VC -14 -16 -18 -20 -2.0 I =0B -2mA -4mA -6mA -8mA -10mA -12mA-14mA Ta=75 C Ta=25 C Ta=-25 C -0.01 VOLTAGE V (mV) -10 -100 -30 -50 -500 -300 CE(sat) -1K COLLECTOR CURRENT I (A) -0.1-0.03 -0.3 -1 C -10 V - ICE(sat) C I /I =20C B Ta=-25 C Ta=25 C Ta=75 C COLLECTOR EMITTER SATURATION BASE-EMITTER SATURATION COLLECTOR CURRENT I (A) -0.03-0.01 -0.1 -0.5 -0.3 -0.1 -0.3 -1 -10-3 C BE(sat) -10 BE(sat)V - I C CI /I =20 VOLTAGE V (V) Ta=-25 C Ta=75 C Ta=25 C B All data s heet.com

-89 1000/Tape&Reel P ACKAGE OUTLINE Plastic surface mounted package SOT-89 SOLDERING FOOTPRINT Unit:mm P ACKAGE INFORMATION SOT -89 Dim Min Max A 4.30 4.70 B 2.25 2.65 C 1.50 Typical D 0.40 Typical E 1.40 1.60 F 0.48 Typical H 1.60 1.80 J 0.40 Typical L 0.90 1.10 K 3.95 4.35 All Dimensio ns in mm Device Package Shipping BK C DE JF A H L 45°45° 1.0 1.5 902. 200.9 1.0 1.5 w ww.dgnjdz.comwww.dgnjdz.com Medium power transistor(-60V,-3A) KTB1124 All data s heet.com