KTA2012E KEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- 2. 20 1/3 SEMICONDUCTOR TECHNICAL DATA KTA2012E EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 SWITCHING APPLICATION.
FEATURES
ᴌA Collector Current is Large. ᴌCollector Saturation Voltage is low. : VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA. ᴌComplementary to KTC4072E. MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS A B D E ESM 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 C G H J 1 3 E B D A G H C J 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Collector Current IC -500 mA ICP * -1 A Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -55ᴕ150 ᴱ Type NameMarking S Z CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA -15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA -6 - - V DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 - Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - -100 -250 mV Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF * Single pulse Pw=1mS.
- 2. 20 2/3 KTA2012E Revision No : 1 CCOLLECTOR CURRENT I (mA) BASE-EMITTER VOLTAGE V (V)BE I - VC BE Ta=125 C V =-2V I /I =20 CE V =-2VCEV =-2VCE CB I /I =20CB I /I =50C B I /I =20CB I /I =10CB Ta=25 C Ta=-40 C Ta=125 C Ta=25 C Ta=-40 C Ta=25 C Ta=125 C Ta=25 C Ta=-40 C Ta=25 C Ta=1 C Ta=2 5 C Ta =-40 C 100 300 500 V - I CCOLLECTOR CURRENT I (mA) CE(sat) C CE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) -1 -3 -10 -30 -100 -300 -1K -10 -30 -50 -100 -300 -500 -1K V - I CCOLLECTOR CURRENT I (mA) CE(sat) C CE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) -1 -3 -10 -30 -100 -300 -1K -10 -30 -50 -100 -300 -500 -1K -0.5 -1.0 -1.5 -10 -30 -50 -100 -300 -500 -1K f - I CCOLLECTOR CURRENT I (mA) TC TTRANSITION FREQUENCY f (MHz) -1 -3 -10 -30 -100 -300 -1 K -100 -10K -300 -500 -1K -3K -5K V - I CCOLLECTOR CURRENT I (mA) BE(sat) C BE(sat) BASE-EMITTER SATURATION VOLTAGE V (mV) 100 300 500 DC CURRENT GAIN hFE COLLECTOR CURRENT I (mA)C h - IFE C
- 2. 20 3/3 KTA2012E Revision No : 1 C - V , C - V CBCOLLECTOR-BASE VOLTAGE V (V) EBEMITTER-BASE VOLTAGE V (V) ob C ob CB ib COLLECTOR INPUT CAPACITANCE C (PF) ob COLLECTOR OUTPUT CAPACITANCE C (PF)-0.1 -0.3 -1 -3 -10 -30 -100 100 300 500 ib C ib EB I =0A f=1MHz Ta=25 C E COLLECTOR POWER DISSIPATION P (mW) C AMBIENT TEMPERATURE Ta ( C) Pc - Ta 25 50 75 100 125 100 150 200 150