KST8550S-3_15 KEXIN | Alldatasheet
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Collector current: IC-=0.5A PNP Transistors KST8550S ■ Classification of hfe(1) 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type KST8550S KST8550S-L KST8550S-H KST8550S-J Range 200-350 120-200 144-202 300-400 Marking 2TY
SMD TypeSMD Type Tran sistors 2 www.kexin.com.cn Typical Characteristics KST8550S -0 -300 -600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -10 0 25 50 75 100 125 150 100 200 300 400 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 COMMON EMITTER Ta=25℃ -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) IC —— VCE IB=-40uA -80uA -500 VBEIC —— T a=25℃ T a=100 ℃ COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC COMMON EMITTER VCE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 400 -20 VCB/VEBCob/Cib —— REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Cib Cob f=1MHz IE=0/IC=0 Ta=25 ℃ PC —— Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ fT —— -500 Ta =100 ℃ Ta =25℃ β=10 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -500 -500 β=10 Ta =25℃ Ta =100 ℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=-1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25℃ Ta =100℃ hFE —— IC 500 -500