KST8050S_15 KEXIN | Alldatasheet
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Collector Current: IC=0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VegatloVesaB-rotcelloC CBO 40 V Collector-Emitter Voltage VCEO 25 V VegatloVesaB-rettimE EBO 5 V Collector Current -Continuous IC 0.5 A PnoitapissiDrotcelloC C 0.3 W TerutarepmeTnoitcnuJ j 150 TerutarepmeTegarotS stg -55 to 150 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Collector-base breakdown voltage VCBO IC = 100 uA, I E V040= Collector-emitter breakdown voltage VCEO IC = 1mA , IB V520= Emitter-base Breakdown voltage VEBO IE = 100 uA, I C V50= Itnerrucffo-tucesab-rotcelloC CBO VCB = 40 V , IE 1.00= A Collector-emitter cut-off current ICEO VCE = 20 V , IB 10= A Itnerrucffo-tucesab-rettimE EBO VEB = 5 V , IC 1.00= A VCE = 1 V , IC = 50 mA 120 400 VCE = 1 V , IC = 500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = 500 mA , IB V6.0Am05= Base-emitter saturation voltage VBE(sat) IC = 500 mA , IB V2.1Am05= fycneuqerfnoitisnarT T VCE = 6 V , IC = 20 mA , f = 30 MHz 150 MHz hniagtnerrucCD FE NPN Transistors KST8050S ■ Classification of hfe(1) Type KST8050S KST8050S-L KST8050S-H KST8050S-J Range 200-350 120-200 144-202 300-400 Marking J3Y 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
www.kexin.com.cn Typical Characteristics KST8050S 1 10 100 100 1000 1 10 100 100 0.1 1 10 100 0 25 50 75 100 125 150 100 200 300 400 0.1 100 1 10 100 0.0 0.4 0.8 1.2 0 4 8 12 16 20 100 fT — — IC hFE — — COMMON EMITTER VCE=1V 3 30 500 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=25℃ Ta=100℃ ICVCEsat —— 500 500 100 30.3 20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/ IC=0 Ta=25℃ VCB/ VEBCob/ Cib — — CAPACITANCE C (pF) 1000 100 VCE=6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC —— Ta 500 VBEIC —— 0.3 Ta=25℃ Ta=100℃ COMMON EMITTER VCE=1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ 500 ICVBEsat — — Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA COMMON EMITTER Ta=25℃