KST8050 KEXIN | Alldatasheet
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Features
Collector Current: IC=1.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 5V Collector Current -Continuous I C 1.5 A Collector Dissipation P C 0.3 W Junction Temperature T j 150 Storage Temperature T stg - 5 5t o1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V CBO IC = 100 ìA , IE =0 4 0 V Collector-emitter breakdown voltage V CEO IC =1 m A,IB =0 2 5 V Emitter-base Breakdown voltage V EBO IE = 100 ìA , IC =0 5 V Collector-base cut-off current I CBO VCB =4 0V,I E =0 0 . 1 A Collector-emitter cut-off current I CEO VCE =2 0V,I B =0 0 . 1 A Emitter-base cut-off current I EBO VEB =5V,I C =0 0 . 1 A VCE =1V,I C = 100 mA 120 400 VCE =1V,I C = 800 mA 40 Collector-emitter saturation voltage V CE(sat) IC = 800 mA , IB =8 0m A 0 . 5 V Base-emitter saturation voltage V BE(sat) IC = 800 mA , IB =8 0m A 1 . 2 V Transition frequency f T VCE =1 0V,I C = 50 mA , f = 30 MHz 100 MHz DC current gain h FE hFE Classification Marking Rank L H J hFE 120 200 200 350 300 400 NPN Transistors KST8050
2 www.kexin.com.cn KST8050 Typical Characteristics Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base Emitter ON Voltage Fig.4 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Fig.5 Current Gain Bandwidth Product Fig.6 Colletor Output Capacitance