KST50 KEXIN | Alldatasheet
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High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit KST50 60 V KST51 80 V KST52 90 V KST50 45 V KST51 60 V KST52 80 V Emitter-base voltage V EBO 5V Collector current (DC) I C 0.5 A Peak collector current I CM 1.5 A base current I B 100 mA Power dissipation Tamb 25 * PD 1.3 W Thermal resistance from junction to ambient * R th(j-a) 96 K/W Thermal resistance from junction to solder point R th(j-s) 16 K/W Junction temperature T j 150 Storage temperature T stg -65 to +150 * Device mounted on a printed-circuitboard, single sided copper, tinplated, mounting pad for collector 6 cm2. VCBOCollector-base voltage VCEOCollector-emitter voltage
2 www.kexin.com.cn SMD Type Transistors Electrical Characteristics Ta = 25 Symbol Testconditons Min Typ Max Unit KST50 V BE=0;VCE=45V 50 nA KST51 V BE=0;VCE=60V 50 nA KST52 V BE=0;VCE=80V 50 nA Emitter cutoff current I EBO VEB =4 V ,IC =0 5 0 n A IC =1 5 0 m A ;VCE = 10 V 1000 IC =500 mA; VCE = 10V 2000 IC =5 0 0m A ;IB =0 . 5m A 1 . 3 V IC =5 0 0m A ;IB = 0.5mA;TJ=150 1.3 V Base to emitte rsaturation voltage V BE(sat) IC =5 0 0m A ;IB=0.5mA 1.9 V turn-on time t on ICon =5 0 0m A ;IBon = 0.5 mA; 400 ns turn-off time t off IBoff = -0.5 mA 1500 ns Transition frequency f T IC =5 0 0m A ;VCE = 5 V; f = 100 MHz 200 MHz VCE(sat) Parameter hFEDC current gain ICESCollector cutoff current Collector-emitter saturation voltage Marking NO. KST50 KST51 KST52 Marking AS1 AS2 AS3 KST50; KST51; KST52 (BST50; BST51; BST52)