KST2222A_06 FAIRCHILD | Alldatasheet

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©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KST2222A Rev. B KST2222A NPN Epitaxial Silicon Transistor tm May 2006 KST2222A NPN Epitaxial Silicon Transistor General Purpose Transistor Absolute Maximum Ratings Ta = 25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature Range -55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V ICBO Collector Cut-off Current VCB = 60V, IE = 0 0.01 µA hFE DC Current Gain * VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA 100 300 VCE (sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.3 1.0 V V VBE (sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 1.2 2.0 V V fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8 pF NF Noise Figure IC = 100µA, VCE = 10V RS = 1KΩ, f = 1MHz 4 dB tON Turn On Time VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA 35 ns tOFF Turn Off Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 285 ns 1. Base 2. Emitter 3. Collector SOT-231 Marking

3 www.fairchildsemi.com KST2222A Rev. B KST2222A NPN Epitaxial Silicon Transistor Mechanical Dimensions 0.96~1.14 0.12 0.03~0.10

0.38 REF

0.40 ±0.03 2.90 ±0.10 1.90 ±0.03 0.508REF 2.40 ±0.10 +0.05 –0.023

0.20 MIN

0.40 ±0.03 SOT-23 Dimensions in Millimeters

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