KST10 ONSEMI | Alldatasheet
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Technical content
Features
- VHF / UHF Transistor
- This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (Note 1) Value are TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCBO Collector−Base Voltage 30 V VCEO Collector−Emitter Voltage 25 V VEBO Emitter−Base Voltage 3 V TSTG Storage Temperature 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to KSP10 for graphs. THERMAL CHARACTERISTICS (Note 2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max Unit PD Power dissipation 350 mW Derate Above 25°C 2.8 mW/°C R/C0113JA Thermal Resistance, Junction to Ambient 357 °C/W with minimum land pattern size. ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Test Condition Min Max Unit BVCBO Collector−Base Breakdown Voltage IC = 100 mA, IE = 0 30 − V BVCEO Collector−Emitter Breakdown Voltage IC = 1 mA, IB = 0 25 − V BVEBO Emitter−Base Breakdown Voltage IE = 10 mA, IC = 0 3 − V ICBO Collector Cut−Off Current VCB = 25 V, IE = 0 − 100 nA IEBO Emitter Cut−Off Current VEB = 2 V, IC = 0 − 100 nA hFE DC Current Gain VCE = 10 V, IC = 4 mA 60 − VCE(sat) Collector−Emitter Saturation Voltage IC = 4 mA, IB = 0.4 mA − 0.5 V VBE(on) Base−Emitter On Voltage VCE = 10 V, IC = 4 mA − 0.95 V fT Current Gain Bandwidth Product VCE = 10 V, IC = 4 mA, f = 100 MHz 650 − MHz Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz − 0.7 pF Crb Common−Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1 MHz − 0.65 pF Cc·rbb‘ Collector−Base Time Constant VCB = 10 V, IC = 4 mA, f = 31.8 MHz − 9 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. MARKING DIAGRAM SOT−23 CASE 318 1. Base 2. Emitter 3. Collector
ORDERING INFORMATION
Device Package Shipping † KST10MTF SOT −23 (Pb−Free) 3E(M)/C0071 /C0071 3E = Specific Device Code M = Date Code /C0071= Pb−Free Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D 3000 / Tape & Reel
SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU DATE 14 AUG 2024 SCALE 4:1 XXXM/C0071 /C0071 XXX = Specific Device Code M = Date Code /C0071= Pb−Free Package GENERIC MARKING DIAGRAM* *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. 98ASB42226BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2SOT−23 (TO−236) 2.90x1.30x1.00 1.90P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU DATE 14 AUG 2024 STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE −ANODE STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE −ANODE STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 20: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 1 THRU 5: CANCELLED STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. 98ASB42226BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2SOT−23 (TO−236) 2.90x1.30x1.00 1.90P © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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