KSS84 KEXIN | Alldatasheet
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Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version Absolute Maximum Ratings Ta = 25unless otherwise specified Parameter Symbol Rating Unit Drain-Source Voltage V DSS -50 V Drain-Gate Voltage RGS 20KÙ VDGR -50 V Gate-Source Voltage Continuous V GSS 20 V Drain Current * Continuous I D -130 mA Total Power Dissipation * P d 300 mW Thermal Resistance, Junction to Ambient R èJA 417 /W Operating and Storage Temperature Range T j,T STG - 5 5t o+ 1 5 0 * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; Marking Marking K84 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain Electrical Characteristics Ta = 25 unless otherwise specified Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage B VDSS VGS =0 V ,ID = -250ìA -50 V VDS =- 5 0 V ,VGS =0 V ,TJ =2 5 -15 ìA VDS =- 5 0 V ,VGS =0 V ,TJ =1 2 5 -60 ìA VDS =- 2 5 V ,VGS =0 V ,TJ =2 5 -100 nA Gate-Body Leakage I GSS VGS = 20V, VDS =0 V 10 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D = -1mA -0.8 -2.0 V Static Drain-Source On-Resistance R DS (ON) VGS =- 5 V ,ID = -0.100A 10 Ù Forward Transconductance g FS VDS = -25V, ID = -0.1A 0.05 S Input Capacitance C iss 45 pF Output Capacitance C oss 25 pF Reverse Transfer Capacitance C rss 12 pF Turn-On Delay Time t D(ON) VDD =- 3 0 V ,ID = -0.27A, 10 ns Turn-Off Delay Time t D(OFF) RGEN = 50Ù, VGS = -10V 18 ns IDSSZero Gate Voltage Drain Current VDS =- 2 5 V ,VGS = 0V,f = 1.0MHz P-Channel Enhancement Mode Field Effect Transistor KSS84