KSS133 KEXIN | Alldatasheet
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Technical content
Features
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage V DSS -20 V Gate-to-Source Voltage V GSS 10 V Drain Current(DC) I D -8 A Drain Current(pulse) *1 I DP -52 A Allowable Power Dissipation *2 P D 1.8 W Channel Temperature T ch 150 Storage Temperature T stg - 5 5t o+ 1 5 0 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1200mm2X0.8mm)
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-to Source Breakdown Voltage V (BR)DSS ID=-1mA, VGS=0 -20 V Zero Gate Voltage Drain Current I DSS VDS =- 2 0V ,VGS =0V - 1 A Gate-to-Source Leakage Current I GSS VGS = 8V ,VDS =0V 10 A Cutoff Voltage V GS(off) VDS =- 1 0V ,ID = -1 mA -0.4 -1.4 V Forward Transfer Admittance Yfs VDS =- 1 0V ,ID = -8 A 14.7 21 S RDS(on)1 VGS =- 4 V ,ID = -8A 18 24 RDS(on)2 VGS =- 2 . 5V ,ID = -2A 25 35 Input Capacitance C iss 2900 pF Output Capacitance C oss 570 pF Reverse Transfer Capacitance C rss 370 pF Turn-on Delay Time t d(on) 27 ns Rise Time t r See Specified Test Circuit 250 ns Turn-off Delay Time t d(off) 130 ns Fall Time t f 180 ns Total Gate Charge Qg 65 nC Gate-to-Source Charge Qgs 4 nC Gate-to-Drain "Miller" Charge Qgd 8 nC Diode Forward Voltage V SD IS=-8A, VGS = 0 V -0.8 -1.5 V VDS =-10 V,f = 1 MHz mDrain to Source On-state Resistance VDS=-10V,VGS=-10V,ID=-8A KSS133 Switching Time Test Circuit Marking Marking S133